If you have any problems related to the accessibility of any content (or if you want to request that a specific publication be accessible), please contact email@example.com.
Now showing items 1-1 of 1
Locating Si atoms in Si-doped boron carbide: A route to understand amorphization mitigation mechanism
he well-documented formation of amorphous bands in boron carbide (B4C) under contact loading has been identified in the literature as one of the possible mechanisms for its catastrophic failure. To mitigate amorphization, ...