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    Locating Si atoms in Si-doped boron carbide: A route to understand amorphization mitigation mechanism 

    Khan, Atta U.; Etzold, Anthony M.; Yang, Xiaokun; Domnich, Vladislav; Xie, Kelvin Y.; Hwang, Chawon; Behler, Kristopher D.; Chen, Mingwei; An, Qi; LaSalvia, Jerry C. (Elsevier, 2018)
    he well-documented formation of amorphous bands in boron carbide (B4C) under contact loading has been identified in the literature as one of the possible mechanisms for its catastrophic failure. To mitigate amorphization, ...